Infineon BSS127I N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127IXTSA1
- N° de stock RS:
- 225-0558
- Référence fabricant:
- BSS127IXTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
219,00 €
(TVA exclue)
264,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 24 mai 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,073 € | 219,00 € |
| 6000 - 12000 | 0,069 € | 207,00 € |
| 15000 + | 0,065 € | 195,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 225-0558
- Référence fabricant:
- BSS127IXTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | BSS127I | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.65nC | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series BSS127I | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.65nC | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Height 1.8mm | ||
Automotive Standard No | ||
Infineon BSS127I Series MOSFET, 600V Maximum Drain Source Voltage, 21mA Maximum Continuous Drain Current - BSS127IXTSA1
This MOSFET is a Compact N-channel enhancement device designed for general switching in surface-mount applications across a wide ambient range. It is intended for circuits requiring a high-voltage transistor with modest current capability and a standard three-pin SOT-23 package for board-level integration.
Features and Benefits:
• 600V drain tolerance enables high-voltage switching capability
• 0.5W power dissipation limits thermal load in tight designs
• 21mA continuous drain current suits low-current signal switching
• 0.65nC gate charge supports Faster gate transitions with low drive
• 600Ω drain-source resistance provides predictable off-state leakage
• 20V gate rating permits Interface with common logic-level drivers
• 0.5W power dissipation limits thermal load in tight designs
• 21mA continuous drain current suits low-current signal switching
• 0.65nC gate charge supports Faster gate transitions with low drive
• 600Ω drain-source resistance provides predictable off-state leakage
• 20V gate rating permits Interface with common logic-level drivers
Applications
• Suitable for high-voltage signal switching in control circuits
• Ideal for low-current power steering of relays and solenoids
• Used with logic drivers where low gate charge reduces losses
• Can be used for board-mounted level-shift and protection circuits
• Appropriate for Compact surface-mount modules requiring small packages
• Ideal for low-current power steering of relays and solenoids
• Used with logic drivers where low gate charge reduces losses
• Can be used for board-mounted level-shift and protection circuits
• Appropriate for Compact surface-mount modules requiring small packages
What temperature range can it tolerate in industrial settings?
It operates reliably from -55°C up to 150°C.
How does the device’s diode-related characteristic affect designs?
The forward conduction threshold is 1.2V which informs diode conduction considerations in circuits.
What mounting and pin-count considerations should designers note?
It is supplied in a SOT-23 surface-mount outline with three pins for straightforward PCB placement.
How does the transistor’s package size influence layout density?
The package measures 6.7 x 3.7 x 1.8 mm, allowing Compact placement while maintaining thermal constraints.
Liens connexes
- Infineon BSS127I N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23 BSS127IXTSA1
- Infineon SIPMOS N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2
- Infineon SIPMOS N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23
- Infineon SIPMOS N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2
- Infineon SIPMOS® N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23