Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23
- N° de stock RS:
- 911-4971
- Référence fabricant:
- BSS126H6327XTSA2
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
558,00 €
(TVA exclue)
675,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 janvier 2027
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,186 € | 558,00 € |
| 6000 - 6000 | 0,181 € | 543,00 € |
| 9000 + | 0,177 € | 531,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 911-4971
- Référence fabricant:
- BSS126H6327XTSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- DE
Infineon SIPMOS Series MOSFET, 600V Maximum Drain Source Voltage, 500mW Maximum Power Dissipation - BSS126H6327XTSA2
This MOSFET is a high-voltage switching transistor designed for surface-mount applications where a compact footprint and extended temperature range are required. It operates as an N-channel depletion device and provides switching and control functionality in power conversion and protection circuits while withstanding harsh ambient conditions.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching
• 700Ω maximum Rds minimises leakage control in the off state
• 21mA continuous drain current supports low-current control loops
• 1.4nC typical gate charge permits faster gate transitions
• 20V gate-source tolerance allows a wide gate drive range
• 500mW power dissipation handles modest thermal loads
• 700Ω maximum Rds minimises leakage control in the off state
• 21mA continuous drain current supports low-current control loops
• 1.4nC typical gate charge permits faster gate transitions
• 20V gate-source tolerance allows a wide gate drive range
• 500mW power dissipation handles modest thermal loads
Applications
• Suitable for high-voltage gate protection circuits
• Ideal for low-current flyback or snubber networks
• Used with automotive sensors and control modules
• Can be used for switch-off elements in power supplies
• Suitable for surface-mount prototypes and compact assemblies
• Ideal for low-current flyback or snubber networks
• Used with automotive sensors and control modules
• Can be used for switch-off elements in power supplies
• Suitable for surface-mount prototypes and compact assemblies
What package type is used for compact PCB mounting?
It is supplied in a small SOT-23 surface-mount package for dense board layouts.
How does it perform across temperature extremes?
The device is specified to operate from -55°C up to 150°C for broad environmental ranges.
What is the diode forward characteristic for reverse conduction considerations?
The intrinsic diode has a forward voltage of 1.2V relevant when the body diode conducts.
What pin configuration and count should I expect when designing footprints?
The device utilises three pins, consistent with single-transistor SOT-23 layouts.
Liens connexes
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