Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23
- N° de stock RS:
- 911-4971
- Référence fabricant:
- BSS126H6327XTSA2
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 3000 unités)*
402,00 €
(TVA exclue)
486,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 25 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,134 € | 402,00 € |
| 6000 - 6000 | 0,127 € | 381,00 € |
| 9000 + | 0,119 € | 357,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 911-4971
- Référence fabricant:
- BSS126H6327XTSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- DE
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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