Infineon CoolMOS N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R1K4P7SAKMA1
- N° de stock RS:
- 222-4708
- Référence fabricant:
- IPSA70R1K4P7SAKMA1
- Fabricant:
- Infineon
Sous-total (1 tube de 75 unités)*
27,90 €
(TVA exclue)
33,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 500 unité(s) expédiée(s) à partir du 12 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 75 + | 0,372 € | 27,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4708
- Référence fabricant:
- IPSA70R1K4P7SAKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-251 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 22.7W | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.38mm | |
| Height | 6.1mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-251 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 22.7W | ||
Maximum Gate Source Voltage Vgs 16V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Operating Temperature 150°C | ||
Width 2.38mm | ||
Height 6.1mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
Liens connexes
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