Infineon CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-251
- N° de stock RS:
- 217-2580
- Référence fabricant:
- IPS70R360P7SAKMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 75 unités)*
77,625 €
(TVA exclue)
93,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 150 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 75 - 75 | 1,035 € | 77,63 € |
| 150 - 300 | 1,007 € | 75,53 € |
| 375 - 675 | 0,981 € | 73,58 € |
| 750 - 1800 | 0,956 € | 71,70 € |
| 1875 + | 0,932 € | 69,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2580
- Référence fabricant:
- IPS70R360P7SAKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 16.4nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.82mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 16.4nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Operating Temperature 150°C | ||
Height 9.82mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss
Excellent thermal behaviour
Integrated ESD protection diode
Low switching losses(Eoss)
Product validation acc. JEDEC Standard
Liens connexes
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