Infineon CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-251 IPS70R360P7SAKMA1
- N° de stock RS:
- 217-2581
- Référence fabricant:
- IPS70R360P7SAKMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
13,84 €
(TVA exclue)
16,74 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 200 unité(s) expédiée(s) à partir du 05 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,692 € | 13,84 € |
| 100 - 180 | 0,602 € | 12,04 € |
| 200 - 480 | 0,561 € | 11,22 € |
| 500 - 980 | 0,519 € | 10,38 € |
| 1000 + | 0,485 € | 9,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2581
- Référence fabricant:
- IPS70R360P7SAKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.4 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 9.82mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Operating Temperature 150°C | ||
Width 2.4 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 9.82mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss
Excellent thermal behaviour
Integrated ESD protection diode
Low switching losses(Eoss)
Product validation acc. JEDEC Standard
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