Infineon CoolMOS Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R900P7SAKMA1

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N° de stock RS:
222-4715
Référence fabricant:
IPSA70R900P7SAKMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-251

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

30.5W

Typical Gate Charge Qg @ Vgs

6.8nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

6.1mm

Width

2.38 mm

Standards/Approvals

No

Length

6.6mm

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard

Low switching losses (Eoss)

Integrated ESD protection diode

Excellent thermal behaviour

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