Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1
- N° de stock RS:
- 220-7445
- Référence fabricant:
- IPSA70R2K0P7SAKMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 25 unités)*
6,80 €
(TVA exclue)
8,225 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 225 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 225 | 0,272 € | 6,80 € |
| 250 - 600 | 0,259 € | 6,48 € |
| 625 - 1225 | 0,253 € | 6,33 € |
| 1250 - 2475 | 0,237 € | 5,93 € |
| 2500 + | 0,19 € | 4,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7445
- Référence fabricant:
- IPSA70R2K0P7SAKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS P7 | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Maximum Power Dissipation Pd | 17.6W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.1mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS P7 | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Maximum Power Dissipation Pd 17.6W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 6.1mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS P7 is an optimized platform tailored to target cost sensitive application in consumer market such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Extremely low losses due rcovery low FOMRDS(on)*Qgand RDS(on)*Eoss
Excellent thermal behavior
Integrated ESD protection diode
Low switching losses(Eoss)
Product validationa cc.JEDEC Standard
Cost competitive technology
Lower temperature
High ES Druggedness
Enables efficiency gainsat higher switching frequencies
Enableshighpowerdensitydesignsandsmallformfactors
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