Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251
- N° de stock RS:
- 214-9109
- Référence fabricant:
- IPS80R900P7AKMA1
- Fabricant:
- Infineon
Sous-total (1 tube de 75 unités)*
58,50 €
(TVA exclue)
70,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 425 unité(s) expédiée(s) à partir du 19 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 75 + | 0,78 € | 58,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9109
- Référence fabricant:
- IPS80R900P7AKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-251 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.35 mm | |
| Length | 6.7mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-251 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.35 mm | ||
Length 6.7mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are Easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs.
Fully optimized portfolio
Integrated Zener Diode ESD protection
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