Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 9.4 A, 700 V Enhancement, 3-Pin TO-251

Voir l’ensemble des MOSFETs

Sous-total (1 tube de 75 unités)*

16,05 €

(TVA exclue)

19,425 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
En stock
  • 1 425 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
le tube*
75 +0,214 €16,05 €

*Prix donné à titre indicatif

N° de stock RS:
220-7442
Référence fabricant:
IPSA70R1K2P7SAKMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS P7

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

4.8nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

25W

Maximum Operating Temperature

150°C

Width

2.38 mm

Height

6.1mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

No

The Infineon has developed he 700V Cool MOS P7 super junction MOSFET series to serve today’s and especially tomorrow’s trends in fly back topologies. It addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. By combining customers’ feedback with over 20 years of super junction MOSFET experience, 700V Cool MOS P7 enables best fit for target applications in terms of:

Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off

Highly performant technology

Low switching losses (E oss)

Highly efficient

Excellent thermal behaviour

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)the of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

Cost competitive technology

Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology

Further efficiency gain at higher switching speed

Supporting less magnetic size with lower BOM costs

High ESD ruggedness up to HBM Class 2 level

Easy to drive and design-in

Enabler for smaller form factors and high power density designs

Excellent choice in selecting the best fitting product

Liens connexes