Infineon HEXFET N-Channel MOSFET, 12.5 A, 80 V, 6-Pin PQFN IRL80HS120
- N° de stock RS:
- 217-2639
- Référence fabricant:
- IRL80HS120
- Fabricant:
- Infineon
Sous-total (1 bobine de 4000 unités)*
1 476,00 €
(TVA exclue)
1 784,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 0,369 € | 1 476,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2639
- Référence fabricant:
- IRL80HS120
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 11.5W | |
| Maximum Operating Temperature | 175°C | |
| Length | 2.1mm | |
| Width | 1mm | |
| Standards/Approvals | No | |
| Height | 2.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 11.5W | ||
Maximum Operating Temperature 175°C | ||
Length 2.1mm | ||
Width 1mm | ||
Standards/Approvals No | ||
Height 2.1mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 80V Maximum Drain Source Voltage, 12.5A Maximum Continuous Drain Current - IRL80HS120
This MOSFET is a Compact N-channel switching transistor designed for surface-mount power applications where controlled conduction and thermal endurance are required. It operates across a wide temperature range and is intended for use in Compact PQFN packages that balance power handling with a small footprint.
Features and Benefits:
• 80V maximum drain-source voltage enables high-voltage switching capability
• 42mΩ Rds(on) minimises conduction losses during heavy loads
• 12.5A continuous drain current supports sustained current delivery
• 7nC typical gate charge allows efficient gate-drive control
• 11.5W maximum power dissipation manages thermal stress in confined layouts
• 20V gate-source limit permits common gate-drive voltages safely
• 42mΩ Rds(on) minimises conduction losses during heavy loads
• 12.5A continuous drain current supports sustained current delivery
• 7nC typical gate charge allows efficient gate-drive control
• 11.5W maximum power dissipation manages thermal stress in confined layouts
• 20V gate-source limit permits common gate-drive voltages safely
Applications
• Suitable for DC-DC converters in Compact power supplies
• Ideal for motor driver stages requiring high-voltage switching
• Used for battery management circuits in power-dense designs
• Can be used for synchronous rectification in power rails
• Used with thermally demanding systems across wide temperature swings
• Ideal for motor driver stages requiring high-voltage switching
• Used for battery management circuits in power-dense designs
• Can be used for synchronous rectification in power rails
• Used with thermally demanding systems across wide temperature swings
What thermal range can it operate within?
It functions from -55°C up to 175°C, allowing use in high-temperature environments.
How many pins are available for PCB routing?
It is supplied in a six-pin PQFN layout to simplify surface-mount routing.
What is the forward voltage and its implication?
The forward voltage is 1.2V, which informs loss and drop calculations in conduction paths.
Which package and mounting style should designers expect?
The device is delivered in a PQFN package intended for surface mounting on Compact PCBs.
What channel type and switching role does it fulfil?
It is an N-channel device suited for low-side or high-side switching topologies depending on circuit requirements.
Liens connexes
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