Infineon HEXFET N-Channel MOSFET, 12.5 A, 80 V, 6-Pin PQFN IRL80HS120
- N° de stock RS:
- 217-2639
- Référence fabricant:
- IRL80HS120
- Fabricant:
- Infineon
Sous-total (1 bobine de 4000 unités)*
1 476,00 €
(TVA exclue)
1 784,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Expédition à partir du 28 décembre 2026
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 0,369 € | 1 476,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2639
- Référence fabricant:
- IRL80HS120
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Maximum Power Dissipation Pd | 11.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 2.1mm | |
| Width | 1mm | |
| Standards/Approvals | No | |
| Height | 2.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Maximum Power Dissipation Pd 11.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 2.1mm | ||
Width 1mm | ||
Standards/Approvals No | ||
Height 2.1mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 80V Maximum Drain Source Voltage, 12.5A Maximum Continuous Drain Current - IRL80HS120
Features and Benefits:
• 42mΩ Rds(on) minimises conduction losses during heavy loads
• 12.5A continuous drain current supports sustained current delivery
• 7nC typical gate charge allows efficient gate-drive control
• 11.5W maximum power dissipation manages thermal stress in confined layouts
• 20V gate-source limit permits common gate-drive voltages safely
Applications
• Ideal for motor driver stages requiring high-voltage switching
• Used for battery management circuits in power-dense designs
• Can be used for synchronous rectification in power rails
• Used with thermally demanding systems across wide temperature swings
What thermal range can it operate within?
How many pins are available for PCB routing?
What is the forward voltage and its implication?
Which package and mounting style should designers expect?
What channel type and switching role does it fulfil?
Liens connexes
- Infineon HEXFET N-Channel MOSFET 80 V, 6-Pin PQFN IRL80HS120
- Infineon HEXFET N-Channel MOSFET 80 V Enhancement, 4-Pin PQFN
- Infineon HEXFET N-Channel MOSFET 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF
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- Infineon HEXFET N-Channel MOSFET 40 V PQFN
- Infineon HEXFET N-Channel MOSFET 20 V PQFN
- Infineon HEXFET N-Channel MOSFET 40 V PQFN
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