Infineon HEXFET N-Channel MOSFET, 22 A, 20 V Enhancement PQFN IRLHS6242TRPBF

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Sous-total (1 bobine de 4000 unités)*

828,00 €

(TVA exclue)

1 000,00 €

(TVA incluse)

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  • Expédition à partir du 07 juin 2027
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Unité
Prix par unité
la bobine*
4000 - 40000,207 €828,00 €
8000 +0,202 €808,00 €

*Prix donné à titre indicatif

N° de stock RS:
257-9444
Référence fabricant:
IRLHS6242TRPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

PQFN

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

11.70mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14nC

Maximum Gate Source Voltage Vgs

12V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

9.6W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon HEXFET Series MOSFET, 20V Maximum Drain‑Source Voltage, 22A Maximum Continuous Drain Current - IRLHS6242TRPBF


This MOSFET is a through‑hole enhancement‑mode N‑channel device designed for switching and power‑control tasks. It operates across a wide ambient range and is suited to environments where Compact packaging and appreciable continuous current are required. Key electrical limits and thermal characteristics support integration into assemblies that demand controlled gate drive and moderate power dissipation.

Features and Benefits:


• Low conduction resistance delivers reduced conduction losses
• High continuous current handles heavier load currents
• Moderate gate charge enables reasonably quick switching
• Wide operating temperature range supports harsh environments
• Controlled gate voltage rating protects against drive overvoltage

Applications


• Suitable for mid‑voltage DC switching and load control
• Ideal for power‑stage components in industrial supplies
• Used with motor‑drive circuits requiring 22A capability
• Can be used for battery management and protection systems
• Appropriate for Compact power converters in PQFN packages

What thermal performance should be expected under load?


It dissipates up to 9.6W, so thermal management such as heatsinking or airflow is required to maintain junction temperatures.

What gate‑drive limits must be observed during design?


The gate‑source voltage must not exceed 12V to avoid overvoltage stress on the input‑gate structure.

How does the device behave across temperature extremes?


It is specified to operate from -55°C to 150°C, allowing use in applications with wide ambient temperature swings.

What are the switching characteristics relevant to transient design?


The typical total gate charge is 14 nC at rated gate‑drive conditions, informing gate‑driver sizing and switching‑loss calculations.

Is this device compliant with common environmental directives?


It meets RoHS criteria, indicating the absence of restricted hazardous substances in its construction.

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