Infineon HEXFET Type N-Channel MOSFET, 259 A, 40 V PQFN

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N° de stock RS:
257-9379
Référence fabricant:
IRFH7004TRPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

259A

Maximum Drain Source Voltage Vds

40V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

1.4mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

156W

Typical Gate Charge Qg @ Vgs

129nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Width

6 mm

Length

5mm

Height

0.9mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFH series is the 40V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Industry standard surface mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Wide portfolio available

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