Infineon OptiMOS-T Type N-Channel MOSFET, 50 A, 120 V Enhancement, 3-Pin TO-252
- N° de stock RS:
- 214-9037
- Référence fabricant:
- IPD50N12S3L15ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
2 272,50 €
(TVA exclue)
2 750,00 €
(TVA incluse)
Ajouter 2500 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 24 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,909 € | 2 272,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9037
- Référence fabricant:
- IPD50N12S3L15ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS-T | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS-T | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Height 2.3mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.
It is Automotive AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
Liens connexes
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-252 IPD50N12S3L15ATMA1
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L08ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD50N06S2L13ATMA2