Infineon OptiMOS-T Type N-Channel MOSFET, 50 A, 120 V Enhancement, 3-Pin TO-252

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Sous-total (1 bobine de 2500 unités)*

2 272,50 €

(TVA exclue)

2 750,00 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
2500 +0,909 €2 272,50 €

*Prix donné à titre indicatif

N° de stock RS:
214-9037
Référence fabricant:
IPD50N12S3L15ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

120V

Package Type

TO-252

Series

OptiMOS-T

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

15mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

44nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.5mm

Standards/Approvals

No

Height

2.3mm

Width

6.22 mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.

It is Automotive AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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