Infineon OptiMOS 5 N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN BSZ110N08NS5ATMA1
- N° de stock RS:
- 214-4345
- Référence fabricant:
- BSZ110N08NS5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
23,88 €
(TVA exclue)
28,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 220 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 1,194 € | 23,88 € |
| 100 - 180 | 1,134 € | 22,68 € |
| 200 - 480 | 1,087 € | 21,74 € |
| 500 - 980 | 1,039 € | 20,78 € |
| 1000 + | 0,967 € | 19,34 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-4345
- Référence fabricant:
- BSZ110N08NS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Width | 3.4mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Width 3.4mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS 5 Series MOSFET, 80V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ110N08NS5ATMA1
This MOSFET is a high-power N-channel semiconductor device designed for surface-mounted power switching and conversion in demanding environments. It operates across a wide temperature span suited to industrial tasks and delivers robust current handling with low voltage drop to support efficient power stages and compact thermal designs.
Features and Benefits:
• 80V drain voltage enables high-voltage switching applications
• 11mΩ low Rds(on) reduces conduction losses at high currents
• 40A continuous drain current supports heavy-load operation
• 15nC typical gate charge for fast, efficient gate switching
• 50W power dissipation allows significant heat handling
• 1.2V forward voltage minimises diode conduction losses
• 11mΩ low Rds(on) reduces conduction losses at high currents
• 40A continuous drain current supports heavy-load operation
• 15nC typical gate charge for fast, efficient gate switching
• 50W power dissipation allows significant heat handling
• 1.2V forward voltage minimises diode conduction losses
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for high-current motor-drive stages
• Used with DC-DC conversion modules in telecoms equipment
• Can be used for battery management and charging systems
• Appropriate for high-power LED driver circuitry
• Ideal for high-current motor-drive stages
• Used with DC-DC conversion modules in telecoms equipment
• Can be used for battery management and charging systems
• Appropriate for high-power LED driver circuitry
What mounting format is required for board assembly?
It is supplied in a PQFN package intended for surface-mount placement requiring a flat PCB land pattern and thermal vias for heat transfer.
How does the device handle thermal extremes during operation?
It is rated to operate from -55°C up to 150°C junction temperatures, permitting use in harsh industrial temperature profiles.
What gate-drive considerations are recommended?
The maximum gate-to-source rating is 20V and the typical total gate charge is 15nC, so a drive capable of rapid charge/discharge with appropriate slew control is advised.
Which conduction characteristic affects PCB thermal design?
Its low drain-source resistance of 11mΩ dictates lower I²R losses, shifting emphasis to managing switching and package thermal dissipation pathways.
Liens connexes
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