Infineon OptiMOS N-Channel MOSFET, 40 A, 40 V N, 8-Pin PQFN BSZ034N04LSATMA1

N° de stock RS:: 214-4338
Référence fabricant:: BSZ034N04LSATMA1
Fabricant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 40 A, 40 V N, 8-Pin PQFN BSZ034N04LSATMA1

Sous-total (1 bobine de 5000 unités)*

1 780,00 €

(TVA exclue)

2 155,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 18 octobre 2027

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Unité	Prix par unité	la bobine*
5000 +	0,356 €	1 780,00 €

*Prix donné à titre indicatif

N° de stock RS:: 214-4338
Référence fabricant:: BSZ034N04LSATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PQFN
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	52W
	Typical Gate Charge Qg @ Vgs	25nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.4mm
	Height	1.1mm
	Width	3.4mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 40V
	Package Type PQFN
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 52W
	Typical Gate Charge Qg @ Vgs 25nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.4mm
	Height 1.1mm
	Width 3.4mm
	Automotive Standard No

Datasheet - BSZ034N04LSATMA1

Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ034N04LSATMA1

This MOSFET is a surface-mount N-channel switching transistor designed for power conversion and high-current applications. It operates across a wide temperature span and is intended for compact, board-mounted designs where low conduction loss and fast switching are required.

Features and Benefits:

• Very low on-resistance 4.6mΩ reduces conduction losses
• High continuous drain current 40A supports heavy loads
• 40V drain-source rating enables mid-voltage power stages
• Typical gate charge 25nC yields faster switching response
• Power dissipation 52W permits substantial heat handling
• Gate-source limit 20V protects against excessive drive voltages

Applications

• Suitable for DC-DC converter switching stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge circuits
• Can be used for battery management and power distribution
• Appropriate for high-current point-of-load modules

What mounting approach does it require on a board?

It is supplied in a PQFN surface-mount package designed for soldered PCB attachment and thermal conduction through the package land pattern.

How does its thermal range affect deployment?

Rated from -55 to 150°C it can be placed in environments with extreme ambient and elevated junction temperatures, subject to appropriate thermal design.

What gate drive considerations apply for switching performance?

With a typical gate charge of 25nC, designers should provide sufficient gate-drive current to achieve targeted transition speeds while managing EMI.

Is it configured for enhancement-mode operation?

The device uses an N-channel conduction mode suitable for low-side and high-side configurations when paired with appropriate gate drive and level shifting.