Références fabricant

Infineon OptiMOS N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin PQFN

N° de stock RS:: 215-2472
Référence fabricant:: BSZ146N10LS5ATMA1
Fabricant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin PQFN

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N° de stock RS:: 215-2472
Référence fabricant:: BSZ146N10LS5ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PQFN
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	14.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	8nC
	Maximum Power Dissipation Pd	52W
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 100V
	Package Type PQFN
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 14.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 8nC
	Maximum Power Dissipation Pd 52W
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSZ146N10LS5ATMA1

Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ146N10LS5ATMA1

This MOSFET is a high-voltage, N-channel enhancement device intended for surface-mount power switching in electronic systems. It is built to operate across a very wide temperature span and is designed for applications requiring substantial current handling and thermal performance while being mounted in a compact PQFN package.

Features and Benefits:

• 100V drain tolerance enables high-voltage switching applications
• 40A continuous drain capability supports heavy current loads
• 14.6mΩ Rds(on) reduces conduction losses in power paths
• 52W maximum power dissipation improves thermal headroom
• 8nC typical gate charge allows faster switching transitions
• Vgs 20V rating permits robust gate-drive voltage margin

Applications

• Suitable for DC-DC converters in power supplies
• Ideal for synchronous rectification in power stages
• Used for motor-drive switching in industrial controllers
• Can be used for telecoms power distribution modules
• Used with compact, high-density surface-mount assemblies

What package type should I expect for compact board layouts?

It comes in a PQFN package designed for surface mounting to support high thermal transfer and low parasitic inductance.

How does the device behave in extreme ambient temperatures?

The permissible operating range spans from -55°C up to 150°C, enabling use in environments with wide temperature excursions.

What gate-charge considerations affect driver selection?

The typical gate charge is 8nC, so choose a driver with sufficient peak current to achieve the desired rise and fall times without excessive switching loss.

How should thermal management be approached for high-power use?

With a maximum dissipation of 52W, ensure adequate PCB copper, thermal vias and a heatsinking strategy to maintain junction temperatures within safe limits.

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