Infineon OptiMOS 5 N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN BSZ070N08LS5ATMA1

N° de stock RS:: 214-4340
Référence fabricant:: BSZ070N08LS5ATMA1
Fabricant:: Infineon

Infineon OptiMOS 5 N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN BSZ070N08LS5ATMA1

Sous-total (1 bobine de 5000 unités)*

3 880,00 €

(TVA exclue)

4 695,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 20 000 unité(s) expédiée(s) à partir du 12 octobre 2026

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Unité	Prix par unité	la bobine*
5000 +	0,776 €	3 880,00 €

*Prix donné à titre indicatif

N° de stock RS:: 214-4340
Référence fabricant:: BSZ070N08LS5ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PQFN
	Series	OptiMOS 5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9.4mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	69W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	14.1nC
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	3.4mm
	Standards/Approvals	No
	Width	3.4mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 80V
	Package Type PQFN
	Series OptiMOS 5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9.4mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 69W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 14.1nC
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 3.4mm
	Standards/Approvals No
	Width 3.4mm
	Automotive Standard No

Datasheet - BSZ070N08LS5ATMA1

Infineon OptiMOS 5 Series MOSFET, 80V Drain Source Voltage, 40A Continuous Drain Current - BSZ070N08LS5ATMA1

This MOSFET is a compact N-channel switching transistor designed for high-current, surface-mount power applications. It operates across a wide temperature span and is engineered for low conduction loss and efficient switching in systems that require robust drain-source performance and moderate gate drive. The device suits PCB-level power stages where a small footprint and PQFN mounting are required.

Features and Benefits:

• Very low on-resistance 9.4mΩ reduces conduction losses
• High continuous current rating 40A supports heavy-load operation
• Drain-source voltage rating 80V enables higher-voltage designs
• Typical gate charge 14.1nC allows faster switching transitions
• Maximum power dissipation 69W helps manage thermal loading

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for motor-drive half-bridge stages on compact PCBs
• Used with battery-management circuits in higher-voltage systems
• Can be used for telecoms and server power rails requiring high current

What gate-voltage limits must I observe for reliable switching?

The device must not be driven beyond a gate-source potential of 20V to avoid gate-oxide stress.

How does ambient temperature affect continuous operation?

Continuous current capability is specified at standard conditions, but operation across the device’s thermal range requires thermal management as power dissipation approaches 69W.

What package characteristics affect PCB layout and soldering?

It uses an 8-pin PQFN surface-mount package with a compact 3.4x3.4mm footprint that requires an appropriate land pattern and thermal vias for heat spreading.

What temperature extremes can it withstand during deployment?

The component is rated to function from -55°C up to 150°C for use in demanding thermal environments.