Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP BSL308CH6327XTSA1

N° de stock RS:: 214-4335
Numéro d'article Distrelec:: 304-39-398
Référence fabricant:: BSL308CH6327XTSA1
Fabricant:: Infineon

Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP BSL308CH6327XTSA1

Sous-total (1 paquet de 50 unités)*

16,25 €

(TVA exclue)

19,65 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité	le paquet*
50 +	0,325 €	16,25 €

*Prix donné à titre indicatif

N° de stock RS:: 214-4335
Numéro d'article Distrelec:: 304-39-398
Référence fabricant:: BSL308CH6327XTSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P, Type N
	Product Type	MOSFET Arrays
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	57mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	-5nC
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	0.6W
	Minimum Operating Temperature	-55°C
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Height	1mm
	Standards/Approvals	IEC61249-2-21, RoHS
	Length	2.9mm
	Number of Elements per Chip	1
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type Type P, Type N
	Product Type MOSFET Arrays
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS
	Package Type TSOP
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 57mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs -5nC
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 0.6W
	Minimum Operating Temperature -55°C
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Height 1mm
	Standards/Approvals IEC61249-2-21, RoHS
	Length 2.9mm
	Number of Elements per Chip 1
	Automotive Standard AEC-Q101

Datasheet - BSL308CH6327XTSA1

Infineon OptiMOS Series MOSFET Arrays, 30V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSL308CH6327XTSA1

This MOSFET array device provides paired P‑channel and N‑channel transistors in a compact surface‑mount package for switching and power-management roles in automotive and industrial electronics. It is supplied in a TSOP 6‑pin format designed for board‑level integration and operation across a wide ambient range, supporting typical gate-charge behaviour suited to rapid switching tasks.

Features and Benefits:

• Low Rds(on) 57mΩ reduces conduction losses and heat generation
• Maximum continuous drain current 2.3A enables moderate load handling
• Maximum Vds 30V supports 30V system architectures
• Maximum gate‑source voltage 20V protects gate integrity under transients
• Forward voltage 1.1V improves efficiency in diode conduction paths
• Rated to 150°C allows reliable operation at elevated junction temperatures

Applications

• Suitable for automotive body control modules requiring AEC compliance
• Ideal for high‑density DC-DC converter switch stages
• Used with battery management circuits in vehicles and equipment
• Can be used for motor driver low‑side or high‑side switching
• Suitable for compact power distribution on surface‑mount PCBs

What mounting type is required for board assembly?

It is a surface‑mount device in a TSOP 6‑pin package intended for reflow soldering to standard PCB land patterns.

How does it behave across temperature extremes?

The device is specified to operate from -55°C up to a maximum of 150°C, allowing use in harsh thermal environments.

Are there separate transistor elements per chip?

There is one element per chip configured as a dual transistor arrangement delivering both P‑ and N‑channel functions.

What standards and material compliance are indicated?

The component is RoHS‑compliant and manufactured using materials conformant with IEC 61249‑2‑21.