Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays, 20 A, 60 V Enhancement, 8-Pin TDSON
- N° de stock RS:
- 223-8521
- Référence fabricant:
- IPG20N06S4L26AATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
1 655,00 €
(TVA exclue)
2 005,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,331 € | 1 655,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 223-8521
- Référence fabricant:
- IPG20N06S4L26AATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET Arrays | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Width | 5.9 mm | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Length | 5.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET Arrays | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Width 5.9 mm | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Length 5.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 60 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
Liens connexes
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays 60 V Enhancement, 8-Pin TDSON IPG20N06S4L26AATMA1
- Infineon Dual OptiMOS Type N-Channel MOSFET 55 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS Type N-Channel MOSFET 55 V Enhancement, 8-Pin TDSON IPG20N06S2L35AATMA1
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35AATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON BSC097N06NSATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 8-Pin TDSON