Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 827-0109
- Référence fabricant:
- BSS806NEH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 250 unités)*
24,50 €
(TVA exclue)
29,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 10 250 unité(s) expédiée(s) à partir du 01 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 250 - 250 | 0,098 € | 24,50 € |
| 500 - 1000 | 0,066 € | 16,50 € |
| 1250 - 2250 | 0,062 € | 15,50 € |
| 2500 - 6000 | 0,059 € | 14,75 € |
| 6250 + | 0,054 € | 13,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-0109
- Référence fabricant:
- BSS806NEH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.3 mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 304-44-429 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.3 mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 304-44-429 | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
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