Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 827-0109
Numéro d'article Distrelec:: 304-44-429
Référence fabricant:: BSS806NEH6327XTSA1
Fabricant:: Infineon

Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23

Sous-total (1 bobine de 250 unités)*

41,50 €

(TVA exclue)

50,25 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

10 250 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	la bobine*
250 +	0,166 €	41,50 €

*Prix donné à titre indicatif

N° de stock RS:: 827-0109
Numéro d'article Distrelec:: 304-44-429
Référence fabricant:: BSS806NEH6327XTSA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	OptiMOS 2
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1.7nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	0.82V
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	2.9mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series OptiMOS 2
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1.7nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf 0.82V
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 2.9mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSS806NEH6327XTSA1

This MOSFET is a small-signal N-channel enhancement device designed for surface-mount applications where compact switching performance is required. It is suitable for use in low-voltage power stages and control circuits across a broad temperature range, offering functionality that supports both consumer and automotive electronics environments.

Features and Benefits:

• Low on-resistance 82mΩ reduces conduction losses and heat
• 20V drain-source rating enables safe low-voltage switching
• 2.3A continuous current supports moderate load currents
• 1.7nC gate charge enables quick gate-drive transitions
• 500mW power dissipation limits thermal stress in tight layouts
• Gate tolerated up to 8V for flexible drive voltages

Applications

• Suitable for battery management and power distribution modules
• Ideal for DC-DC converters in compact assemblies
• Used with microcontroller outputs for low-voltage switching
• Can be used for load switching in automotive electronics
• Used for signal-level power control in embedded systems

What package and mounting style does it use?

It comes in a SOT-23 package designed for surface mounting to save board space and simplify automated placement.

What temperature conditions can it withstand during operation?

It operates across a wide thermal interval from -55°C up to 150°C to accommodate harsh environments and elevated junction temperatures.

How many pins are available and what is the channel type?

There are three pins and the device uses an N-channel conduction path configured in enhancement mode.

What is the typical forward/bulk diode characteristic?

The device exhibits a forward voltage of 0.82V across its intrinsic diode under typical conduction conditions.