Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP
- N° de stock RS:
- 214-4334
- Référence fabricant:
- BSL308CH6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
501,00 €
(TVA exclue)
606,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 9 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,167 € | 501,00 € |
| 6000 + | 0,163 € | 489,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-4334
- Référence fabricant:
- BSL308CH6327XTSA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 57mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.6W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | -5nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Height | 1mm | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 57mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.6W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs -5nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Height 1mm | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET Arrays, 30V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSL308CH6327XTSA1
Features and Benefits:
• Maximum continuous drain current 2.3A enables moderate load handling
• Maximum Vds 30V supports 30V system architectures
• Maximum gate‑source voltage 20V protects gate integrity under transients
• Forward voltage 1.1V improves efficiency in diode conduction paths
• Rated to 150°C allows reliable operation at elevated junction temperatures
Applications
• Ideal for high‑density DC-DC converter switch stages
• Used with battery management circuits in vehicles and equipment
• Can be used for motor driver low‑side or high‑side switching
• Suitable for compact power distribution on surface‑mount PCBs
What mounting type is required for board assembly?
How does it behave across temperature extremes?
Are there separate transistor elements per chip?
What standards and material compliance are indicated?
Liens connexes
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