Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP BSL308CH6327XTSA1
- N° de stock RS:
- 214-4334
- Référence fabricant:
- BSL308CH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
501,00 €
(TVA exclue)
606,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,167 € | 501,00 € |
| 6000 + | 0,163 € | 489,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-4334
- Référence fabricant:
- BSL308CH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET Arrays | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 57mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | -5nC | |
| Maximum Power Dissipation Pd | 0.6W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 1mm | |
| Width | 1.6mm | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET Arrays | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 57mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs -5nC | ||
Maximum Power Dissipation Pd 0.6W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 1mm | ||
Width 1.6mm | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET Arrays, 30V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSL308CH6327XTSA1
This MOSFET array device provides paired P‑channel and N‑channel transistors in a compact surface‑mount package for switching and power-management roles in automotive and industrial electronics. It is supplied in a TSOP 6‑pin format designed for board‑level integration and operation across a wide ambient range, supporting typical gate-charge behaviour suited to rapid switching tasks.
Features and Benefits:
• Low Rds(on) 57mΩ reduces conduction losses and heat generation
• Maximum continuous drain current 2.3A enables moderate load handling
• Maximum Vds 30V supports 30V system architectures
• Maximum gate‑source voltage 20V protects gate integrity under transients
• Forward voltage 1.1V improves efficiency in diode conduction paths
• Rated to 150°C allows reliable operation at elevated junction temperatures
• Maximum continuous drain current 2.3A enables moderate load handling
• Maximum Vds 30V supports 30V system architectures
• Maximum gate‑source voltage 20V protects gate integrity under transients
• Forward voltage 1.1V improves efficiency in diode conduction paths
• Rated to 150°C allows reliable operation at elevated junction temperatures
Applications
• Suitable for automotive body control modules requiring AEC compliance
• Ideal for high‑density DC-DC converter switch stages
• Used with battery management circuits in vehicles and equipment
• Can be used for motor driver low‑side or high‑side switching
• Suitable for compact power distribution on surface‑mount PCBs
• Ideal for high‑density DC-DC converter switch stages
• Used with battery management circuits in vehicles and equipment
• Can be used for motor driver low‑side or high‑side switching
• Suitable for compact power distribution on surface‑mount PCBs
What mounting type is required for board assembly?
It is a surface‑mount device in a TSOP 6‑pin package intended for reflow soldering to standard PCB land patterns.
How does it behave across temperature extremes?
The device is specified to operate from -55°C up to a maximum of 150°C, allowing use in harsh thermal environments.
Are there separate transistor elements per chip?
There is one element per chip configured as a dual transistor arrangement delivering both P‑ and N‑channel functions.
What standards and material compliance are indicated?
The component is RoHS‑compliant and manufactured using materials conformant with IEC 61249‑2‑21.
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