Vishay EF Type N-Channel Power MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 653-176
- Référence fabricant:
- SIHB155N60EF-GE3
- Fabricant:
- Vishay
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4,82 €
(TVA exclue)
5,83 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 4,82 € |
| 10 + | 4,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-176
- Référence fabricant:
- SIHB155N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.79mm | |
| Width | 9.65mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.79mm | ||
Width 9.65mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHB155N60EF-GE3
This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial electronics. It operates as an enhancement-mode transistor suitable for through-hole mounting and is intended for applications requiring robust switching at elevated voltages and currents.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications • 21 A continuous drain current supports substantial load handling • 0.159 Ω Rds(on) reduces conduction losses for efficient operation • 179W power dissipation allows sustained thermal load management • 25 nC typical gate charge facilitates Rapid switching transitions • 30V maximum gate tolerance permits common gate-drive voltages
Applications
• Suitable for high-voltage power supplies in automation equipment • Ideal for motor-drive stages requiring through-hole components • Used for industrial switch-mode power supplies with high dissipation • Can be used for power conversion modules in electrical systems • Suitable for prototyping and serviceable installations needing through-hole parts
What mounting considerations apply for thermal management?
The device uses a TO-263 through-hole package that benefits from a substantial heatsink or PCB copper area to dissipate up to 179W under appropriate cooling conditions.
How does gate charge influence gate-drive design?
A typical gate charge of 25 nC at rated gate drive affects switching losses and dictates driver current capability for desired rise and fall times.
What temperature range can be expected during operation?
The component is specified to operate down to -55 °C and up to 150 °C, requiring suitable thermal design to maintain junction temperatures within limits.
Are there restrictions on gate voltage during use?
Gate-source voltage must not exceed 30V to prevent gate oxide stress and ensure long-term reliability.
What electrical characteristics impact efficiency in power supplies?
The combination of low Rds(on) and the 600V drain capability reduces conduction and switching losses in high-voltage converter topologies.
Liens connexes
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