Vishay EF Type N-Channel Power MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220AB SIHP186N60EF-GE3
- N° de stock RS:
- 200-6818
- Référence fabricant:
- SIHP186N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 50 unités)*
90,95 €
(TVA exclue)
110,05 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 50 - 50 | 1,819 € | 90,95 € |
| 100 - 200 | 1,71 € | 85,50 € |
| 250 + | 1,554 € | 77,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 200-6818
- Référence fabricant:
- SIHP186N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 193mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.65mm | |
| Standards/Approvals | RoHS | |
| Length | 10.52mm | |
| Height | 14.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 193mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Operating Temperature 150°C | ||
Width 4.65mm | ||
Standards/Approvals RoHS | ||
Length 10.52mm | ||
Height 14.4mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 18A Drain Current - SIHP186N60EF-GE3
This power MOSFET is a high-voltage switching device designed for demanding power-electronic roles in industrial systems. It functions as an N-channel enhancement-mode transistor for control of high-voltage DC loads and switching stages, intended for through-hole mounting in equipment where robust conduction and thermal handling are required.
Features and Benefits:
• 650V maximum drain voltage enables high-voltage switching
• 18A continuous drain current supports substantial load currents
• 193mΩ RDS(on) reduces conduction losses during operation
• 32nC typical gate charge enables predictable switching performance
• 156W maximum power dissipation aids thermal design choices
• 30V gate tolerance allows flexible drive voltage ranges
• 18A continuous drain current supports substantial load currents
• 193mΩ RDS(on) reduces conduction losses during operation
• 32nC typical gate charge enables predictable switching performance
• 156W maximum power dissipation aids thermal design choices
• 30V gate tolerance allows flexible drive voltage ranges
Applications
• Suitable for high-voltage inverter front ends in industrial drives
• Ideal for switch-mode power supplies handling elevated DC bus voltages
• Used for discrete power stages in automation and motor-control units
• Can be used for load-switching in power distribution modules
• Ideal for switch-mode power supplies handling elevated DC bus voltages
• Used for discrete power stages in automation and motor-control units
• Can be used for load-switching in power distribution modules
What operating temperature range can it withstand?
It operates from -55°C to 150°C, enabling use across varied thermal environments and elevated-temperature applications.
How is the device intended to be mounted in equipment?
It is supplied in a through-hole TO-220AB package with three pins suitable for secure board mounting and straightforward heatsinking options.
What is the expected gate drive characteristic for switching design?
With a typical gate charge of 32nC at rated conditions, designers can estimate gate-drive energy and choose appropriate drivers for target switching speeds.
What mechanical footprint considerations should be noted?
The package presents Compact external dimensions with a moderate profile, facilitating integration where vertical clearance and board retention are factors.
Liens connexes
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