Vishay MOSFET SI7113DN-T1-GE3

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
180-7305
Référence fabricant:
SI7113DN-T1-GE3
Fabricant:
Vishay
Pays d'origine :
CN

Vishay MOSFET


The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 134mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 13.2A. This product has been optimized for lower switching and conduction losses. It has applications in the active clamp in intermediate DC/DC power supplies. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and Lead (Pb) free

• Low thermal resistance powerpak package with small size and low 1.07mm profile

• Maximum and minimum driving voltage is 4.5V and 10V

• Maximum dissipation power is 52W

• Operating temperature ranges between -50°C and 150°C

• TrenchFET power MOSFET

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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