Vishay TrenchFET Type P-Channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK 1212-8 SIS413DN-T1-GE3
- N° de stock RS:
- 180-7936
- Référence fabricant:
- SIS413DN-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
10,56 €
(TVA exclue)
12,78 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 0,528 € | 10,56 € |
| 200 - 480 | 0,517 € | 10,34 € |
| 500 - 980 | 0,433 € | 8,66 € |
| 1000 - 1980 | 0,338 € | 6,76 € |
| 2000 + | 0,285 € | 5,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7936
- Référence fabricant:
- SIS413DN-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0094Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | RoHS | |
| Length | 3.61mm | |
| Width | 3.61 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0094Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals RoHS | ||
Length 3.61mm | ||
Width 3.61 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is a P-channel, PowerPAK-1212-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 9.4mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 52W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Adaptor switches
• Load switches
• Mobile computing
• Power management
Liens connexes
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