Vishay SI7121ADN-T1-GE3, Type P-Channel IGBT, 8-Pin PowerPAK 1212-8, Surface

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N° de stock RS:
180-7866
Référence fabricant:
SI7121ADN-T1-GE3
Fabricant:
Vishay
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Marque

Vishay

Product Type

IGBT

Maximum Power Dissipation Pd

27.8W

Package Type

PowerPAK 1212-8

Mount Type

Surface

Channel Type

Type P

Pin Count

8

Minimum Operating Temperature

50°C

Maximum Gate Emitter Voltage VGEO

25 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.61mm

Height

1.12mm

Automotive Standard

No

Energy Rating

9.8mJ

Pays d'origine :
CN

Vishay MOSFET


The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has a drain-source resistance of 15mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 27.8W and continuous drain current of 18A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. With the help of this MOSFET, excellent performance and efficiency can be achieved at lower costs. The MOSFET offers excellent efficiency along with long productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Low thermal resistance powerpak package with small size

• Maximum dissipation power is 27.8W

• Operating temperature ranges between -50°C and 150°C

• TrenchFET power MOSFET

Applications


• Mobile computing

• Adaptor switches

• Load switches - Battery management

• Notebook computers

• Power management

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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