Vishay Single TrenchFET Type P-Channel MOSFET, 18 A, 20 V, 8-Pin PowerPAK 1212-8 SIS407ADN-T1-GE3
- N° de stock RS:
- 180-7892
- Référence fabricant:
- SIS407ADN-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
11,40 €
(TVA exclue)
13,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 0,57 € | 11,40 € |
| 200 - 480 | 0,559 € | 11,18 € |
| 500 - 980 | 0,439 € | 8,78 € |
| 1000 - 1980 | 0,354 € | 7,08 € |
| 2000 + | 0,322 € | 6,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7892
- Référence fabricant:
- SIS407ADN-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.009Ω | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Power Dissipation Pd | 39.1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS | |
| Height | 0.79mm | |
| Width | 3.61 mm | |
| Length | 3.61mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.009Ω | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Power Dissipation Pd 39.1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS | ||
Height 0.79mm | ||
Width 3.61 mm | ||
Length 3.61mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is a P-channel, PowerPAK-1212-8 package is a new age product with a drain-source voltage of 20V and maximum gate-source voltage of 8V. It has a drain-source resistance of 9mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 39.1W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free component
• Low thermal resistance PowerPAK package
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Adaptor switches
• Battery management
• Load switches
Liens connexes
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