Vishay Type P-Channel MOSFET, 13.2 A, 100 V, 8-Pin PowerPAK 1212-8 SI7113DN-T1-GE3
- N° de stock RS:
- 180-7804
- Référence fabricant:
- SI7113DN-T1-GE3
- Fabricant:
- Vishay
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 180-7804
- Référence fabricant:
- SI7113DN-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.145Ω | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Minimum Operating Temperature | 50°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.61 mm | |
| Length | 3.61mm | |
| Standards/Approvals | RoHS, JEDEC JS709A | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.145Ω | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Minimum Operating Temperature 50°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.61 mm | ||
Length 3.61mm | ||
Standards/Approvals RoHS, JEDEC JS709A | ||
Height 1.12mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 134mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 13.2A. This product has been optimized for lower switching and conduction losses. It has applications in the active clamp in intermediate DC/DC power supplies. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and Lead (Pb) free
• Low thermal resistance powerpak package with small size and low 1.07mm profile
• Maximum and minimum driving voltage is 4.5V and 10V
• Maximum dissipation power is 52W
• Operating temperature ranges between -50°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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