Vishay Type P-Channel MOSFET, 5.7 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7415DN-T1-GE3
- N° de stock RS:
- 180-7759
- Référence fabricant:
- SI7415DN-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
15,84 €
(TVA exclue)
19,17 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 890 unité(s) expédiée(s) à partir du 03 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,584 € | 15,84 € |
| 100 - 240 | 1,426 € | 14,26 € |
| 250 - 490 | 1,267 € | 12,67 € |
| 500 - 990 | 1,157 € | 11,57 € |
| 1000 + | 0,998 € | 9,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7759
- Référence fabricant:
- SI7415DN-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.065Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.8W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21 | |
| Length | 3.61mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.065Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.8W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21 | ||
Length 3.61mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 65mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.8W and continuous drain current of 5.7A. It has a minimum and a maximum driving voltage 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fast switching
• Halogen free
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Half-bridge motor drives
• High voltage non-synchronous buck converters
• Load switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007