Microchip N-Channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 LND01K1-G

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
178-5338
Référence fabricant:
LND01K1-G
Fabricant:
Microchip
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Marque

Microchip

Channel Type

N

Maximum Continuous Drain Current

330 mA

Maximum Drain Source Voltage

9 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Depletion

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +0.6 V

Number of Elements per Chip

1

Width

1.75mm

Length

3.05mm

Transistor Material

Si

Maximum Operating Temperature

+125 °C

Minimum Operating Temperature

-25 °C

Height

1.3mm

LND01 N-Channel MOSFET Transistors


The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

Features


Bi-directional
Low On-Resistance
Low Input Capacitance
Fast Switching Speeds
High Input Impedance and High Gain
Low Power Drive Requirement
Ease of Parallel Operation


MOSFET Transistors, Microchip

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