Microchip LND01 N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND01K1-G
- N° de stock RS:
- 598-897
- Référence fabricant:
- LND01K1-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 3000 unités)*
2 154,00 €
(TVA exclue)
2 607,00 €
(TVA incluse)
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Temporairement en rupture de stock
- Expédition à partir du 10 avril 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,718 € | 2 154,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-897
- Référence fabricant:
- LND01K1-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel DMOS FET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Series | LND01 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -25°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.3mm | |
| Length | 3.05mm | |
| Standards/Approvals | ISO/TS‑16949, RoHS | |
| Width | 1.75 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel DMOS FET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Series LND01 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -25°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.3mm | ||
Length 3.05mm | ||
Standards/Approvals ISO/TS‑16949, RoHS | ||
Width 1.75 mm | ||
Automotive Standard No | ||
The Microchip Depletion-Mode MOSFET is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Low on resistance
Low input capacitance
Fast switching speeds
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Liens connexes
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