Microchip DN3135 Type N-Channel MOSFET, 135 mA, 350 V Depletion, 3-Pin SOT-23

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Sous-total (1 bobine de 3000 unités)*

1 068,00 €

(TVA exclue)

1 293,00 €

(TVA incluse)

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Dernier stock RS
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la bobine*
3000 +0,356 €1 068,00 €

*Prix donné à titre indicatif

N° de stock RS:
165-5144
Référence fabricant:
DN3135K1-G
Fabricant:
Microchip
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Marque

Microchip

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

135mA

Maximum Drain Source Voltage Vds

350V

Package Type

SOT-23

Series

DN3135

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

35Ω

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

1.3W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Maximum Operating Temperature

150°C

Length

3.04mm

Height

1.02mm

Width

1.4 mm

Standards/Approvals

Lead (Pb)-free/RoHS

Automotive Standard

No

DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an Advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

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