Vishay Siliconix TrenchFET Type P-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin TO-252 SQD40031EL_GE3
- N° de stock RS:
- 178-3950
- Référence fabricant:
- SQD40031EL_GE3
- Fabricant:
- Vishay Siliconix
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
12,60 €
(TVA exclue)
15,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 630 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,26 € | 12,60 € |
| 100 - 490 | 1,074 € | 10,74 € |
| 500 - 990 | 0,946 € | 9,46 € |
| 1000 + | 0,82 € | 8,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-3950
- Référence fabricant:
- SQD40031EL_GE3
- Fabricant:
- Vishay Siliconix
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 186nC | |
| Maximum Power Dissipation Pd | 136W | |
| Forward Voltage Vf | -1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 186nC | ||
Maximum Power Dissipation Pd 136W | ||
Forward Voltage Vf -1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 6.22mm | ||
Automotive Standard AEC-Q101 | ||
Statut RoHS : Exempté
- Pays d'origine :
- TW
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.2mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 136W and continuous drain current of 100A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Liens connexes
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 30 V Enhancement, 4-Pin TO-252
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 4-Pin TO-252
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 4-Pin TO-252 SQD40061EL_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin SC-70
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 200 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin SC-70