IXYS HiperFET, Q3-Class N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 168-4731
- Référence fabricant:
- IXFH50N60P3
- Fabricant:
- IXYS
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 168-4731
- Référence fabricant:
- IXFH50N60P3
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | HiperFET, Q3-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 145mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.46mm | |
| Width | 5.3mm | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series HiperFET, Q3-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 145mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Maximum Power Dissipation Pd 1.04kW | ||
Maximum Operating Temperature 150°C | ||
Height 21.46mm | ||
Width 5.3mm | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Liens connexes
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- IXYS HiperFET 18 A 3-Pin TO-247 IXFH18N100Q3
- IXYS Single HiperFET Type N-Channel MOSFET 1000 V Enhancement, 3-Pin TO-247 IXFH15N100Q3