onsemi PowerTrench N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK FDD8444L-F085
- N° de stock RS:
- 166-2073
- Référence fabricant:
- FDD8444L-F085
- Fabricant:
- onsemi
Sous-total (1 bobine de 2500 unités)*
2 010,00 €
(TVA exclue)
2 432,50 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,804 € | 2 010,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-2073
- Référence fabricant:
- FDD8444L-F085
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | PowerTrench | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 153 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 46 nC @ 5 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 40 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 153 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 46 nC @ 5 V | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
- Pays d'origine :
- US