onsemi QFET N-Channel MOSFET, 1.8 A, 800 V, 3-Pin DPAK FQD2N80TM
- N° de stock RS:
- 166-1793
- Référence fabricant:
- FQD2N80TM
- Fabricant:
- onsemi
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 166-1793
- Référence fabricant:
- FQD2N80TM
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.8 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | QFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.3 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 6.6mm | |
| Width | 6.1mm | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 2.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 800 V | ||
Series QFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 6.6mm | ||
Width 6.1mm | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 2.3mm | ||
Minimum Operating Temperature -55 °C | ||
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