onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 750 mA, 30 V Enhancement, 6-Pin SOT-363 FDG8850NZ

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
166-2658
Référence fabricant:
FDG8850NZ
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

750mA

Maximum Drain Source Voltage Vds

30V

Series

PowerTrench

Package Type

SOT-363

Mount Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-12/12 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

1mm

Length

2mm

Width

1.25 mm

Number of Elements per Chip

2

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Liens connexes