Références fabricant

onsemi Isolated PowerTrench 2 N-Channel MOSFET, 1.2 A, 20 V Enhancement, 6-Pin SOT-363 FDG1024NZ

N° de stock RS:: 145-5680
Référence fabricant:: FDG1024NZ
Fabricant:: onsemi

onsemi Isolated PowerTrench 2 N-Channel MOSFET, 1.2 A, 20 V Enhancement, 6-Pin SOT-363 FDG1024NZ

Actuellement indisponible

Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.

N° de stock RS:: 145-5680
Référence fabricant:: FDG1024NZ
Fabricant:: onsemi

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Transistor Configuration	Isolated
	Series	PowerTrench
	Number of Elements per Chip	2
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	1.2 A
	Maximum Drain Source Voltage (Vds)	20 V
	Channel Mode	Enhancement
	Pin Count	6
	Package Type	SOT-363
	Automotive Standard	No
	Forward Voltage (Vf)	700 mV
	Height	1 mm
	Length	2 mm
	Maximum Drain Source Resistance (Rds)	259 mΩ
	Maximum Gate Source Voltage (Vgs)	-8 V, +8 V
	Maximum Operating Temperature	150 °C
	Maximum Power Dissipation (Pd)	360 mW
	Minimum Operating Temperature	-55 °C
	Mount Type	Surface
	Standards/Approvals	No
	Typical Gate Charge (Qg) @ Vgs	1.8 nC
	Width	1.25 mm

	Sélectionner tout
	Marque onsemi
	Transistor Configuration Isolated
	Series PowerTrench
	Number of Elements per Chip 2
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 1.2 A
	Maximum Drain Source Voltage (Vds) 20 V
	Channel Mode Enhancement
	Pin Count 6
	Package Type SOT-363
	Automotive Standard No
	Forward Voltage (Vf) 700 mV
	Height 1 mm
	Length 2 mm
	Maximum Drain Source Resistance (Rds) 259 mΩ
	Maximum Gate Source Voltage (Vgs) -8 V, +8 V
	Maximum Operating Temperature 150 °C
	Maximum Power Dissipation (Pd) 360 mW
	Minimum Operating Temperature -55 °C
	Mount Type Surface
	Standards/Approvals No
	Typical Gate Charge (Qg) @ Vgs 1.8 nC
	Width 1.25 mm

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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