Infineon Isolated OptiMOS™ 2 Type N, Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 6-Pin TSOP-6 BSL316CH6327XTSA1

N° de stock RS:: 166-1082
Référence fabricant:: BSL316CH6327XTSA1
Fabricant:: Infineon

Infineon Isolated OptiMOS™ 2 Type N, Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 6-Pin TSOP-6 BSL316CH6327XTSA1

Sous-total (1 bobine de 3000 unités)*

432,00 €

(TVA exclue)

522,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité	la bobine*
3000 +	0,144 €	432,00 €

*Prix donné à titre indicatif

N° de stock RS:: 166-1082
Référence fabricant:: BSL316CH6327XTSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	1.5A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS™
	Package Type	TSOP-6
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.4nC
	Forward Voltage Vf	0.86V
	Maximum Power Dissipation Pd	500mW
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Height	1mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 1.5A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS™
	Package Type TSOP-6
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.4nC
	Forward Voltage Vf 0.86V
	Maximum Power Dissipation Pd 500mW
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Height 1mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Pays d'origine :: MY

Infineon OptiMOS™ Series MOSFET, 30V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSL316CH6327XTSA1

This MOSFET provides compact, surface-mount switching for low-voltage applications in automotive and industrial contexts. It is an isolated dual-channel transistor designed for enhancement-mode operation, offering both N- and P-channel elements in a 6-pin TSOP package. The device supports typical gate-charge behaviour suited to fast switching and operates across a wide temperature span required by harsh environments.

Features and Benefits:

• 30V drain voltage enables low-voltage system switching
• 280mΩ drain-source resistance reduces conduction losses
• 2.4nC typical gate charge for efficient gate drive
• 1.5A continuous drain current for moderate current loads
• 500mW power dissipation prevents overheating in compact layouts
• AEC‑Q101 qualification ensures suitability for automotive use

Applications

• Suitable for DC load switching in vehicle electronics
• Used for complementary push‑pull driver stages
• Ideal for SMD power management on control boards
• Can be used for battery protection and load disconnects
• Appropriate for temperature‑sensitive automotive modules

What pin count and package type does it use?

The component comes in a 6-pin TSOP‑6 surface-mount package optimised for compact assemblies.

How does it perform across temperatures?

It is rated to operate from -55°C up to 150°C, maintaining functionality in extreme ambient conditions.

Is the device single- or multi-element?

The die contains two isolated elements, providing both N- and P-channel configurations on a single chip.

What gate voltage limits must be observed?

Gate-to-source voltage must not exceed 20V to prevent damage to the gate insulation.