Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET, 2 A, 30 V Enhancement, 6-Pin TSOP BSL308PEH6327XTSA1
- N° de stock RS:
- 165-5552
- Référence fabricant:
- BSL308PEH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
564,00 €
(TVA exclue)
681,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,188 € | 564,00 € |
| 6000 + | 0,179 € | 537,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-5552
- Référence fabricant:
- BSL308PEH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | -5nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 2.9mm | |
| Width | 1.6mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs -5nC | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 2.9mm | ||
Width 1.6mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
Infineon OptiMOS P Series MOSFET, 30V Drain Source Voltage, 2A Maximum Continuous Drain Current - BSL308PEH6327XTSA1
This MOSFET is a P‑channel enhancement transistor intended for surface‑mount applications in automotive and industrial electronics. It provides switched‑device functionality for high‑temperature environments and is delivered in a compact TSOP 6‑pin package with dual elements on a single chip, suitable for space‑constrained circuit assemblies.
Features and Benefits:
• Low on‑resistance of 130mΩ reduces conduction losses
• Rated for 30V drain‑source voltage enabling 30V system use
• Continuous drain current capability of 2A supports moderate loads
• Typical gate charge -5nC at Vgs for faster switching response
• Power dissipation 500mW allows reliable thermal handling
• Qualified to AEC‑Q101 for automotive stress performance
• Rated for 30V drain‑source voltage enabling 30V system use
• Continuous drain current capability of 2A supports moderate loads
• Typical gate charge -5nC at Vgs for faster switching response
• Power dissipation 500mW allows reliable thermal handling
• Qualified to AEC‑Q101 for automotive stress performance
Applications
• Suitable for high‑temp automotive power switches
• Ideal for load‑switching in battery management systems
• Used with DC‑DC converters requiring P‑channel devices
• Can be used for dual‑channel polarity protection circuits
• Suitable for compact surface‑mount power distribution boards
• Ideal for load‑switching in battery management systems
• Used with DC‑DC converters requiring P‑channel devices
• Can be used for dual‑channel polarity protection circuits
• Suitable for compact surface‑mount power distribution boards
What gate voltage limits should I observe for safe operation?
The gate‑to‑source voltage must not exceed 20V in either polarity to avoid device stress.
How many transistors are contained on the chip and what does that enable?
There are two P‑channel elements per chip, permitting paired switching or simplified dual‑channel layouts.
What ambient temperature range can the device withstand during operation?
It is specified for operation from -55°C up to 150°C for applications with elevated junction temperatures.
How does the package affect board placement and routing?
The TSOP 6‑pin surface package minimises board footprint and simplifies thermal and signal routing for compact designs.
Liens connexes
- Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP BSL308PEH6327XTSA1
- Infineon Isolated OptiMOS 2 Type P 1.5 A 6-Pin TSOP
- Infineon Isolated OptiMOS 2 Type P 1.5 A 6-Pin TSOP BSL215CH6327XTSA1
- Infineon Isolated OptiMOS™ 2 Type N 1.5 A 6-Pin TSOP-6 BSL316CH6327XTSA1
- Infineon Isolated OptiMOS 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-88
- Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1
- Infineon Isolated OptiMOS 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-88 2N7002DWH6327XTSA1
- Infineon Dual OptiMOS 1 Type P 2.3 A 6-Pin TSOP