Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET, 2 A, 30 V Enhancement, 6-Pin TSOP BSL308PEH6327XTSA1

N° de stock RS:: 892-2172
Numéro d'article Distrelec:: 304-44-410
Référence fabricant:: BSL308PEH6327XTSA1
Fabricant:: Infineon

Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET, 2 A, 30 V Enhancement, 6-Pin TSOP BSL308PEH6327XTSA1

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15,04 €

(TVA exclue)

18,20 €

(TVA incluse)

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Unité	Prix par unité	le paquet*
40 +	0,376 €	15,04 €

*Prix donné à titre indicatif

N° de stock RS:: 892-2172
Numéro d'article Distrelec:: 304-44-410
Référence fabricant:: BSL308PEH6327XTSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	2A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSOP
	Series	OptiMOS P
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	130mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	-0.8V
	Typical Gate Charge Qg @ Vgs	-5nC
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Height	1mm
	Length	2.9mm
	Standards/Approvals	No
	Width	1.6mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 2A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSOP
	Series OptiMOS P
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 130mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf -0.8V
	Typical Gate Charge Qg @ Vgs -5nC
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Height 1mm
	Length 2.9mm
	Standards/Approvals No
	Width 1.6mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Infineon OptiMOS P Series MOSFET, 30V Drain Source Voltage, 2A Maximum Continuous Drain Current - BSL308PEH6327XTSA1

This MOSFET is a P‑channel enhancement transistor intended for surface‑mount applications in automotive and industrial electronics. It provides switched‑device functionality for high‑temperature environments and is delivered in a compact TSOP 6‑pin package with dual elements on a single chip, suitable for space‑constrained circuit assemblies.

Features and Benefits:

• Low on‑resistance of 130mΩ reduces conduction losses
• Rated for 30V drain‑source voltage enabling 30V system use
• Continuous drain current capability of 2A supports moderate loads
• Typical gate charge -5nC at Vgs for faster switching response
• Power dissipation 500mW allows reliable thermal handling
• Qualified to AEC‑Q101 for automotive stress performance

Applications

• Suitable for high‑temp automotive power switches
• Ideal for load‑switching in battery management systems
• Used with DC‑DC converters requiring P‑channel devices
• Can be used for dual‑channel polarity protection circuits
• Suitable for compact surface‑mount power distribution boards

What gate voltage limits should I observe for safe operation?

The gate‑to‑source voltage must not exceed 20V in either polarity to avoid device stress.

How many transistors are contained on the chip and what does that enable?

There are two P‑channel elements per chip, permitting paired switching or simplified dual‑channel layouts.

What ambient temperature range can the device withstand during operation?

It is specified for operation from -55°C up to 150°C for applications with elevated junction temperatures.

How does the package affect board placement and routing?

The TSOP 6‑pin surface package minimises board footprint and simplifies thermal and signal routing for compact designs.