Infineon HEXFET P-Channel MOSFET, 9.2 A, 30 V, 8-Pin SOIC IRF9393TRPBF

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Informations sur le stock actuellement non accessibles
N° de stock RS:
165-8282
Référence fabricant:
IRF9393TRPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.2 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+150 °C

Length

5mm

Transistor Material

Si

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.5mm

Pays d'origine :
CN

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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