Infineon HEXFET P-Channel MOSFET, 9.2 A, 30 V, 8-Pin SOIC IRF9393TRPBF
- N° de stock RS:
- 165-8282
- Référence fabricant:
- IRF9393TRPBF
- Fabricant:
- Infineon
Sous-total (1 bobine de 4000 unités)*
1 108,00 €
(TVA exclue)
1 340,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 0,277 € | 1 108,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-8282
- Référence fabricant:
- IRF9393TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 9.2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 32.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Length | 5mm | |
| Width | 4mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1.2V | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 9.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 32.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Length 5mm | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Forward Diode Voltage 1.2V | ||
- Pays d'origine :
- CN
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