Infineon HEXFET Type P-Channel MOSFET, 5.4 A, 30 V Enhancement, 8-Pin SOIC

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Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
168-5981
Référence fabricant:
IRF9335TRPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.4A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

9.1nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Height

1.5mm

Width

4 mm

Length

5mm

Standards/Approvals

No

Automotive Standard

No

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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