Infineon HEXFET P-Channel MOSFET, 2.2 A, 150 V, 8-Pin SOIC IRF6216PBF

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N° de stock RS:
165-7563
Référence fabricant:
IRF6216PBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

P

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

150 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

33 nC @ 10 V

Number of Elements per Chip

1

Length

5mm

Width

4mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Pays d'origine :
US

P-Channel Power MOSFET 100V to 150V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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