Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 165-6910
- Référence fabricant:
- SI2366DS-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
450,00 €
(TVA exclue)
540,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 29 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,15 € | 450,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-6910
- Référence fabricant:
- SI2366DS-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si2366DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4mm | |
| Standards/Approvals | RoHS | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si2366DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4mm | ||
Standards/Approvals RoHS | ||
Length 3.04mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay Si2366DS Series MOSFET, 30V Maximum Drain Source Voltage, 5.8A Maximum Continuous Drain Current - SI2366DS-T1-GE3
This MOSFET is a low-voltage N-channel semiconductor device designed for surface-mounted power switching in Compact electronic assemblies. It operates within a moderate voltage range and supports temperature extremes, making it suitable for dense board-level designs where small footprint and controlled switching behaviour are required.
Features and Benefits:
• 42mΩ Rds(on) yields low conduction losses during switching
• 5.8A continuous drain current supports moderate load currents
• 30V drain-source rating enables low-voltage power rails
• 6.4nC typical gate charge permits fast gate transitions
• 2.1W power dissipation allows for sustained thermal loading
• 150°C maximum operating temperature endures elevated environments
• 5.8A continuous drain current supports moderate load currents
• 30V drain-source rating enables low-voltage power rails
• 6.4nC typical gate charge permits fast gate transitions
• 2.1W power dissipation allows for sustained thermal loading
• 150°C maximum operating temperature endures elevated environments
Applications
• Suitable for DC step-down converters in automation equipment
• Ideal for load switching in control and Interface modules
• Used for motor driver stages in small electromechanical systems
• Can be used for battery protection and power-path management
• Used with Compact consumer power supplies requiring surface-mount parts
• Ideal for load switching in control and Interface modules
• Used for motor driver stages in small electromechanical systems
• Can be used for battery protection and power-path management
• Used with Compact consumer power supplies requiring surface-mount parts
What mounting style does it require for PCB assembly?
It is supplied for surface-mount placement in a three-pin package compatible with standard SOT-23 footprints.
What gate voltage endurance should designers expect?
The device tolerates gate-source voltages up to 20V, so gate drive must remain within that limit.
How wide an ambient temperature range can it operate in?
It is specified to operate down to -55°C and up to 150°C junction temperature for broad thermal margins.
What mechanical package size considerations are there for layout?
The package measures approximately 3.04mm length, 1.4mm width and 1.02mm height for footprint and clearance planning.
Are there environmental or regulatory characteristics to note?
The component conforms to RoHS requirements for reduced hazardous substances.
Liens connexes
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