Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3

N° de stock RS:: 165-6910
Référence fabricant:: SI2366DS-T1-GE3
Fabricant:: Vishay

Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3

Sous-total (1 bobine de 3000 unités)*

363,00 €

(TVA exclue)

438,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 10 mai 2027

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Unité	Prix par unité	la bobine*
3000 +	0,121 €	363,00 €

*Prix donné à titre indicatif

N° de stock RS:: 165-6910
Référence fabricant:: SI2366DS-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.8A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	Si2366DS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	42mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	6.4nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	2.1W
	Forward Voltage Vf	0.85V
	Maximum Operating Temperature	150°C
	Width	1.4mm
	Length	3.04mm
	Standards/Approvals	RoHS
	Height	1.02mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.8A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series Si2366DS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 42mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 6.4nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 2.1W
	Forward Voltage Vf 0.85V
	Maximum Operating Temperature 150°C
	Width 1.4mm
	Length 3.04mm
	Standards/Approvals RoHS
	Height 1.02mm
	Automotive Standard No

Pays d'origine :: CN

Vishay Si2366DS Series MOSFET, 30V Maximum Drain Source Voltage, 5.8A Maximum Continuous Drain Current - SI2366DS-T1-GE3

This MOSFET is a compact N-channel enhancement device designed for surface-mount switching in low-voltage electronic circuits. It operates across a wide temperature range and is suited to power-management roles where efficient conduction and moderate switching are required. The package is a common SOT-23 form factor for use in densely populated assemblies.

Features and Benefits:

• Maximum drain voltage 30V enabling low-voltage power switching
• Continuous drain current 5.8A for sustained current handling
• Low Rds(on) 42mΩ reducing conduction losses
• Forward voltage 0.85V supporting efficient drive conditions
• Typical gate charge 6.4nC allowing controlled switching energy
• Power dissipation 2.1W for thermal-limited applications

Applications

• Suitable for USB power-distribution and load switching
• Ideal for DC-DC converter output-stage use
• Used with battery-management and charging circuits
• Can be used for motor-driver low-side switching
• Useful in consumer electronics power-rail protection

What package should I expect for automated assembly?

It is supplied in a SOT-23 surface-mount package compatible with standard pick-and-place and reflow processes.

How well does it tolerate harsh thermal environments?

Rated for operation from -55 °C up to 150 °C, it accommodates a broad range of ambient and elevated junction temperatures.

What gate drive amplitude is permitted?

The device accepts up to ±20V between gate and source, permitting a wide range of drive voltages within that limit.

How many pins are available for PCB footprint routing?

It uses a three-pin configuration typical of small-signal MOSFETs, simplifying footprint layout and routing.