Références fabricant

Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 180-7267
Référence fabricant:: SI2300DS-T1-GE3
Fabricant:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23

Sous-total (1 bobine de 3000 unités)*

483,00 €

(TVA exclue)

585,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Dernier stock RS

3 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	la bobine*
3000 +	0,161 €	483,00 €

*Prix donné à titre indicatif

N° de stock RS:: 180-7267
Référence fabricant:: SI2300DS-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	68mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	1.1W
	Typical Gate Charge Qg @ Vgs	3nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Standards/Approvals	No
	Height	1.12mm
	Width	2.64 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 68mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 1.1W
	Typical Gate Charge Qg @ Vgs 3nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Standards/Approvals No
	Height 1.12mm
	Width 2.64 mm
	Automotive Standard No

Datasheet

Pays d'origine :: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 12V. It has drain-source resistance of 68mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converter for portable devices

• Load switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested