Références fabricant

Vishay TrenchFET Type N-Channel MOSFET, 3.1 A, 100 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 180-7275
Référence fabricant:: SI2392ADS-T1-GE3
Fabricant:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 3.1 A, 100 V Enhancement, 3-Pin SOT-23

Sous-total (1 bobine de 3000 unités)*

522,00 €

(TVA exclue)

633,00 €

(TVA incluse)

Ajouter 3000 unités pour bénéficier d'une livraison gratuite

Commandes ci-dessous 75,00 € coût (TVA exclue) 5,95 €.

Informations sur le stock actuellement non accessibles

Unité	Prix par unité	la bobine*
3000 +	0,174 €	522,00 €

*Prix donné à titre indicatif

N° de stock RS:: 180-7275
Référence fabricant:: SI2392ADS-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	189mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	2.9nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.6W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Width	2.64 mm
	Length	3.04mm
	Standards/Approvals	No
	Height	1.12mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 189mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 2.9nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.6W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Width 2.64 mm
	Length 3.04mm
	Standards/Approvals No
	Height 1.12mm
	Automotive Standard No

Datasheet

Pays d'origine :: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source resistance of 126mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 3.1A and maximum power dissipation of 2.5W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Boost converters

• DC/DC converters

• LED backlighting in LCD TVs

• Load switch

• Power management for mobile computing

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested