Vishay TrenchFET Type N-Channel MOSFET, 3.1 A, 100 V Enhancement, 3-Pin SOT-23

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N° de stock RS:
180-7275
Référence fabricant:
SI2392ADS-T1-GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

189mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2.9nC

Maximum Power Dissipation Pd

1.6W

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

3.04mm

Standards/Approvals

No

Width

2.64 mm

Height

1.12mm

Automotive Standard

No

Pays d'origine :
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source resistance of 126mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 3.1A and maximum power dissipation of 2.5W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• Boost converters

• DC/DC converters

• LED backlighting in LCD TVs

• Load switch

• Power management for mobile computing

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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