Infineon OptiMOS™ 3 N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ035N03MSGATMA1
- N° de stock RS:
- 165-6657
- Référence fabricant:
- BSZ035N03MSGATMA1
- Fabricant:
- Infineon
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 165-6657
- Référence fabricant:
- BSZ035N03MSGATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TSDSON | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 4.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 69 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 3.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 27 nC @ 4.5 V | |
| Length | 3.4mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSDSON | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 3.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 27 nC @ 4.5 V | ||
Length 3.4mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
- Pays d'origine :
- SG
Liens connexes
- Infineon OptiMOS™ 3 N-Channel MOSFET 30 V, 8-Pin TSDSON BSZ050N03MSGATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 8-Pin TSDSON BSZ12DN20NS3GATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 3-Pin DPAK IPD30N03S2L10ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 30 V, 3-Pin DPAK IPD40N03S4L08ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON BSZ0904NSIATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS™ Type N-Channel MOSFET 30 V, 8-Pin TDSON BSC005N03LS5ATMA1