Infineon OptiMOS™ 3 N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TSDSON BSZ12DN20NS3GATMA1

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
165-6894
Référence fabricant:
BSZ12DN20NS3GATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Package Type

TSDSON

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

3.4mm

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.4mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Statut RoHS non applicable

Pays d'origine :
CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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