Infineon OptiMOS™ -T2 N-Channel MOSFET, 40 A, 30 V, 3-Pin DPAK IPD40N03S4L08ATMA1

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Informations sur le stock actuellement non accessibles
N° de stock RS:
857-4596
Référence fabricant:
IPD40N03S4L08ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

1

Length

6.73mm

Width

6.22mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.41mm

Statut RoHS non applicable

Infineon OptiMOS™ T2 Power MOSFETs


Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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